I grew up in Marseille, France, I got my MS degree at the Aix-Marseille University (AMU) in materials for nanosciences and energy in 2013.
I then did a Ph.D. in the materials science department of the Institut Matériaux Microelectronique Nanoscience de Provence (IM2NP) laboratory, the subject of my thesis was to investigate doping and contacts formation for germanium technology. My work focused on selenium and tellurium for n-type doping, as well as on gallium and aluminum for p-type doping. Palladium was the metal chosen for the fabrication of ohmic contacts. This work includes the study of extended defect interactions with dopants, dopant clustering, dopant diffusion in Ge(001) during post-implantation annealing, and the formation and stability of Pd germanide thin films to evaluate and optimize the use of the PdGe compound as ohmic contact on Ge. Finally, dopant redistribution in PdGe thin films and in the Ge substrate during ohmic contact fabrication was also investigated. Dopant diffusion, cluster and defect formation, and extended defects / dopant interactions were studied by secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM) and laser-assisted atom probe tomography (SAT).