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Dr. Jacques Perrin Toinon

I grew up in Marseille, France, I got my MS degree at the Aix-Marseille University (AMU) in materials for nanosciences and energy in 2013.
I then did a Ph.D. in the materials science department of the Institut Matériaux Microelectronique Nanoscience de Provence (IM2NP) laboratory, the subject of my thesis was to investigate doping and contacts formation for germanium technology. My work focused on selenium and tellurium for n-type doping, as well as on gallium and aluminum for p-type doping. Palladium was the metal chosen for the fabrication of ohmic contacts. This work includes the study of extended defect interactions with dopants, dopant clustering, dopant diffusion in Ge(001) during post-implantation annealing, and the formation and stability of Pd germanide thin films to evaluate and optimize the use of the PdGe compound as ohmic contact on Ge. Finally, dopant redistribution in PdGe thin films and in the Ge substrate during ohmic contact fabrication was also investigated. Dopant diffusion, cluster and defect formation, and extended defects / dopant interactions were studied by secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM) and laser-assisted atom probe tomography (SAT).


Research

My work currently focuses on study of Cobalt alloys and Aluminum alloys by atom probe tomography.

Aluminum alloys and cobalt alloys

Education

Ph.D., Materials Science and Engineering, Institut Matériaux Microélectronique Nanosciences de Provence (IM2NP), France

M.S., Université Aix-Marseille (AMU), France

Contact

Phone: 847-491-3575
Fax:  
e-mail: jacques.perrintoinin@u.northwestern.edu
Address: Materials Science & Eng
2220 Campus Drive
Evanston, IL 60208

Select Honors

Publications

  1. Perrin Toinin, J.; Portavoce, A.; Texier, M.; Bertoglio, M.; Hoummada, K.; “First stages of Pd/Ge reaction: mixing effects and dominant diffusing species” (2016) Microelectron. Eng.  167, 52 Doi: 10.1016/j.mee.2016.11.002
  2. Perrin Toinin, J.; Portavoce , A.; Texier, M. ; Bertoglio, M.; Hoummada, K. “Te homogeneous precipitation in Ge dislocation loop vicinity” (2016) Appl. Phys. Lett. 108, 232103 Doi : 10.1063/1.4953627
  3. Perrin Toinin, J.; Hoummada, K.; Bertoglio, M.; Portavoce, A. “Origin of the first-phase selection during thin film reactive diffusion: Experimental and theoretical insights into the Pd-Ge system” (2016) Scr. Mater., 122, 22-25 Doi: 10.1016/j.scriptamat.2016.05.008
  4. Perrin Toinin, J.; Hoummada, K.; Bertoglio, M.; Portavoce, A. “Thermal stability of PdGe films on Ge(100) substrate” (2016) Scr. Mater., 120, 46-48 Doi: 10.1016/j.scriptamat.2016.04.012
  5. Portavoce , A.; Perrin Toinin, J.; Hoummada, K. “Vacancy-mediated atomic transport in nano-crystals” (2016) Rev. adv. mater. sci. (Online) (in press corrected proof).
  6. Portavoce, A. ; Perrin Toinin, J. ; Hoummada, K.; Raymond, L.; Tréglia, G. “Stress influence on substitutional impurity segregation on dislocation loops in IV–IV semiconductors” (2016) Comput. Mater. Sci., 114, 23 Doi:10.1016/j.commatsci.2015.12.016
  7. Sarpi, B.; Rochdi, N.; Daineche, R.; Bertoglio, M.; Girardeaux, C.; Baronnet, A.; Perrin-Toinin, J.; Bocquet, M.; Djafari Rouhani, M.; Hemeryck A. ; Vizzini, S. “Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11–1)/Si (100) heterostructure” (2015) Surface Science, 642, L1 Doi:10.1016/j.susc.2015.08.003
  8. Perrin Toinin, J.; Portavoce , A.; Hoummada, K.,;Texier, M., Bertoglio, M.; Bernardini, S.; Chow, L. “Te implantation in Ge(001) for n-type doping applications” (2015) Mater. Sci. Semicond. Process., 42, 215 Doi: 10.1016/j.nimb.2015.07.069
  9. Perrin Toinin J., Y. Rudzevich, K. Hoummada, M. Texier, S. Bernardini, A. Portavoce, L. Chow, “Formation of germanium oxide microcrystals on the surface of Te-implanted Ge” (2015) Nucl. Instr. Meth. Phys. Res. B, 365 A, 252. Doi:10.1016/j.nimb.2015.07.069.
  10. Perrin Toinin, J.; Portavoce, A.; Hoummada, K.; Texier, M.; Bertoglio, M.; Bernardini, S.; Abbarchi, M.; Chow, L. “Nanoporous Ge thin film production combining Ge sputtering and dopant implantation” (2015). Beilstein Journal of Nanotechnology, 6, 336–342. Doi: 10.3762/bjnano.6.32

 

April 3, 2017