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Dr. Anthony DeLuca

Born in Marseille, France, I got my MS degree at the Aix-Marseille University (AMU) in materials science and microelectronic engineering in 2010. I then did a Ph.D. in the materials science department of the Institut Matériaux Microelectronique Nanoscience de Provence (IM2NP) laboratory, again at Aix-Marseille University, and obtained it in January 2014.
My Ph.D subject was to study the atomic redistribution of metallic contaminants in silicon and near a SiO2/Si interface during microelectronic process. This work was conducted in the frame of the COMET project. To conduct this study, I used three characterization techniques which were: the Atom Probe Tomography (APT), Transmission Electron Microscopy (TEM) and Secondary Ion Mass Spectrometry (SIMS). The use of these three techniques allowed me to investigate the chemical distribution of the contaminants close to the SiO2/Si interface, measure the chemical composition of precipitates and identify their crystalline structures. I have investigated the diffusion, segregation and precipitation of five metallic contaminants (W, Fe, Mo, Ni and Au) during diffusion annealing and oxidation annealing of the silicon contaminated wafers.

After this Ph.D was completed, I switched from microelectronic subject to Metallurgy when I joined both the Dunand and Seidman research groups, as a postdoctoral fellow on a joint project between Northwestern University and Ford. My job here is to engineer a new high-temperature light-weight precipitation-hardened aluminum alloy.
I investigate the properties of alloy by means of microhardness and creep measurement. In order to understand more precisely which of the different possible mechanism for precipitation hardening is responsible for the increase in hardness, atom probe tomography is performed to obtain the chemical compositions, sizes and distributions of nano-scale precipitates.



Aluminum alloys


Ph.D., Materials Science and Engineering, Institut Matériaux Microélectronique Nanosciences de Provence (IM2NP) , France

M.S., Aix-Marseille University (AMU) , France


Phone: 847-491-3575
Address: Materials Science & Eng
2220 Campus Drive
Evanston, IL 60208

Select Honors


  1. A. De Luca, A. Portavoce, M. Texier, C. Grosjean, N. Burle, V. Oison, B. Pichaud, ”Tungsten diffusion in silicon”, Journal of Applied Physics 115 (2014) 013501,

  2. F. Panciera, D. Mangelinck, K.Hoummada, M.Texier, M.Bertoglio, A. De Luca, M.Gregoire, M. Juhel, ”Direct epitaxial growth of θ-Ni2Si by reaction of thin Ni(10 at.%Pt) film with Si(100) substrate”, Scripta Materialia, 78-79 (2014) pp 9-12, doi:10.1016/j.scriptamat.2014.01.010
  3. A. De Luca, A. Portavoce, M. Texier, N. Burle, B. Pichaud, ”Dynamic segregation of metallic impurities at SiO2 /Si interfaces”, Journal of Physics: Conference Series 471 (2013) 012029, doi:10.1088/1742-6596/471/1/012029
  4. M. Texier, A. De Luca, B. Pichaud, M. Jublot, C. Tromas, J.L. Demenet, J. Rabier, ”Evidence of perfect dislocations’glide in nanoindented 4H-SiC”, Journal of Physics: Conference Series 471 (2013) 012013, doi:10.1088/1742-6596/471/1/012013.


September 16, 2016